Isolation charge pump fabricated in silicon on sapphire CMOS technology

Electronics Letters

Volumn 41, Issue 10, 2005, Pages 590-592

  Culurciello, E ^a   Pouliquen, P O ^b   Andreou, A G ^b  

^a Yale University   (United States)

^b Whiting School of Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC PROPERTIES; DIODES; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; FABRICATION; MOSFET DEVICES; OPTICAL PUMPING; SAPPHIRE; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

CHARGE PUMP; CIRCUIT ARCHITECTURE; DIELECTRIC COUPLING CAPACITORS; SILICON ON SAPPHIRE (SOS);

CMOS INTEGRATED CIRCUITS;

EID: 19944370806     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20050312     Document Type: Article

References (7)

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6. Andreou, A.G., et al.: 'Silicon on sapphire CMOS for optoelectronic microsystems', IEEE, Circuits Syst. Mag., 2001, 1, (3), pp. 22-30
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