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Volumn 72, Issue SUPPL. A, 2003, Pages 53-56

Does m*g* diverge at a finite electron density in silicon inversion layers?

Author keywords

Effective mass; G factor; Land ; Magnetic susceptibility; Magnetoconductivity; Metal insulator transition; Quantum phase transition; Shubnikov de Haas oscillations; Silicon MOSFET; Two dimensional system

Indexed keywords


EID: 19844381048     PISSN: 00319015     EISSN: 13474073     Source Type: Journal    
DOI: 10.1143/jpsjs.72sa.53     Document Type: Conference Paper
Times cited : (7)

References (22)
  • 15
    • 4243760045 scopus 로고    scopus 로고
    • It should be noted that E. Tutuc et al have reported that the g-value unexpectedly decreases with decreasing density in n- GaAs. See
    • It should be noted that E. Tutuc et al have reported that the g-value unexpectedly decreases with decreasing density in n- GaAs. See E. Tutuc, S. Melinte, and M. Shayegan: Phys. Rev. Lett. 88 (2002) 36805.
    • (2002) Phys. Rev. Lett. , vol.88 , pp. 36805
    • Tutuc, E.1    Melinte, S.2    Shayegan, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.