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Volumn 72, Issue SUPPL. A, 2003, Pages 53-56
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Does m*g* diverge at a finite electron density in silicon inversion layers?
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Author keywords
Effective mass; G factor; Land ; Magnetic susceptibility; Magnetoconductivity; Metal insulator transition; Quantum phase transition; Shubnikov de Haas oscillations; Silicon MOSFET; Two dimensional system
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Indexed keywords
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EID: 19844381048
PISSN: 00319015
EISSN: 13474073
Source Type: Journal
DOI: 10.1143/jpsjs.72sa.53 Document Type: Conference Paper |
Times cited : (7)
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References (22)
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