Reticle CD-SEM for the 65-nm technology node and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 2, 2004, Pages 876-886

  Schlueter, Gerhard W B ^a   Nakamura, Takayuki ^b   Matsumoto, Jun ^b   Seyama, Masahiro ^b   Whittey, John M ^c  

^a VISTEC SEMICONDUCTOR SYSTEMS GMBH   (Germany)

^b ADVANTEST CORPORATION   (Japan)

^c Leica Microsystems Inc   (United States)

Author keywords

CD measurement; CD SEM; Charging free; Contamination free; Critical dimension measurement; Mask metrology

Indexed keywords

CD MEASUREMENT; CHARGING-FREE; CONTAMINATION-FREE; CRITICAL DIMENSION SCANNING ELECTRON MICROSCOPE (CD-SEM); MASK METROLOGY;

COMPUTER SOFTWARE; GRAPHICAL USER INTERFACES; MASKS; MEASUREMENTS; REGRESSION ANALYSIS; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS;

PHOTOLITHOGRAPHY;

EID: 19844366701     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.568270     Document Type: Conference Paper

References (3)

1. K.-D. Roeth, C. Blaesing-Bangert, J. M. Whittey, Performance data obtained on a new mask metrology tool; Annual BACUS Symposium on Photomask Technology and Management, 1996
2. G. W. Schlueter, K.-D. Roeth, C. Blaesing-Bangert, M. Ferber, Michael, Next-generation mask metrology tool; Photomask and Next-Generation Lithography Mask Technology IX, July 2002
3. A. K. Chernakova, A. J. Fan, CD SEM carry-over effect investigation; Metrology, Inspection, and Process Control for Microlithography XV, August 2001