Lasing characteristics of InGaAsInGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Choi, Woon Kyung ^a   Kim, Doo Gun ^a   Choi, Young Wan ^a   Lee, Seok ^b   Woo, Deok Ha ^b   Kim, Sun Ho ^b  

^a Chung Ang University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM WELLS; SENSITIVITY ANALYSIS; SWITCHING; THYRISTORS;

DEPLETED OPTICAL THYRISTORS (DOT); LASER STRUCTURES; PACKET-SWITCHING DEVICES; SWITCHING ENERGY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 19744383689     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1850184     Document Type: Article

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