Zeeman splitting in ferromagnetic Schottky barrier contacts based on doped EuS

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Ren, Cong ^a   Trbovic, Jelena ^a   Xiong, Peng ^a   Von Molnár, Stephan ^a  

^a FLORIDA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; EUROPIUM COMPOUNDS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIZATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; THERMIONIC EMISSION; TRANSPORT PROPERTIES;

FERROMAGNETIC SEMICONDUCTORS; SCHOTTKY BARRIER CONTACTS; TEMPERATURE DEPENDENCE; ZEEMAN SPLITTING;

SCHOTTKY BARRIER DIODES;

EID: 19744382853     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1842857     Document Type: Article

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