Origin of metal-insulator transition temperature enhancement in La 0.8Ba0.2MnO3 thin films as determined by structural analysis

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 12, 2004, Pages

  Kanai, M ^a,b   Tanaka, H ^a   Kawai, T ^a  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM; LANTHANIDE; MANGANESE OXIDE; STRONTIUM; TITANIUM DIOXIDE;

ARTICLE; CELL TRANSFORMATION; CELL VOLUME; CONCENTRATION RESPONSE; ELECTRICITY; FILM; METAL BINDING; METAL INSULATION TRANSITION TEMPERATURE; OXYGEN TRANSPORT; STRUCTURE ANALYSIS; TEMPERATURE MEASUREMENT; THICKNESS; TRANSITION TEMPERATURE ENHANCEMENT;

EID: 19744382069     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.125109     Document Type: Article

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