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Volumn 70, Issue 9, 2004, Pages

Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ATOM; DIODE; ELECTRIC RESISTANCE; ELECTRICITY; ION TRANSPORT; MAGNETIC FIELD; MAGNETISM; MATHEMATICAL COMPUTING; STRUCTURE ANALYSIS;

EID: 19744382007     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.094406     Document Type: Article
Times cited : (61)

References (39)
  • 1
    • 0032573499 scopus 로고    scopus 로고
    • G. Prinz, Science 282, 1660 (1998); Phys. Today 58, 58 (1995).
    • (1998) Science , vol.282 , pp. 1660
    • Prinz, G.1
  • 2
    • 0032573499 scopus 로고    scopus 로고
    • G. Prinz, Science 282, 1660 (1998); Phys. Today 58, 58 (1995).
    • (1995) Phys. Today , vol.58 , pp. 58
  • 13
    • 9144248540 scopus 로고    scopus 로고
    • note
    • Throughout the paper we will use the "optimistic" definition of magnetoresistance MR=[A(0) - R(B)]/R(B), where R(B) is the magnetic field dependent resistance of the device.
  • 19


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.