Van der Waals Growth of Thin TaS2 on Layered Substrates by Chemical Vapor Transport Technique

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 2 A, 2004, Pages

  Enomoto, Hiroyuki ^a   Kawano, Takanori ^a   Kawaguchi, Masayuki ^a   Takano, Yoshiki ^b   Sekizawa, Kazuko ^b  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^b NIHON UNIVERSITY   (Japan)

Author keywords

BN; Mica; TaS2; Transition metal dichalcogenides; Van der Waals growth; X ray diffraction

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; MICA; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; SURFACE PHENOMENA; VAN DER WAALS FORCES; X RAY DIFFRACTION ANALYSIS;

BN; TAS2; TRANSITION METAL DICHALCOGENIDES; VAN DER WAALS GROWTH;

TANTALUM COMPOUNDS;

EID: 1942539915     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l123     Document Type: Article

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