Inter-dot electron transport in coupled InAs quantum dots under a magnetic field

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Inada, M ^a   Umezu, I ^a   Vaccaro, P O ^b   Yamada, S ^c   Sugimura, A ^a  

^a KONAN UNIVERSITY   (Japan)

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; MAGNETIC COUPLINGS; MAGNETIC FIELD EFFECTS; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; RESONANCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTRON TRANSPORT; INTER-DOT ELECTRIC COUPLING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1942516959     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/020     Document Type: Conference Paper

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