3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Marchi, Alex ^a   Bertoni, Andrea ^a,b   Reggiani, Susanna ^a   Rudan, Massimo ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b S3 Research Center   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTROSTATICS; INTERFACES (MATERIALS); POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WIRES;

CONDUCTION BANDS; WAVE-PACKETS;

HETEROJUNCTIONS;

EID: 1942516377     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/136     Document Type: Conference Paper

References (5)

1. Bertoni A et al 2002 J. Mod. Opt. 49 1219
2. Biasiol G and Sorba L 2001 Crystal Growth of Materials for Energy Production and Energy-Saving Applications ed R Fornari and L Sorba (Pisa: ETS Edn) pp 66-83
3. ISE TCAD Manuals 2002 V. 8.5. ISE-Integrated Systems Engineering AG Zurich
4. Davies J H and Larkin I A 1994 Phys. Rev. B 49 4800
5. Davies J H et al 1995 J. Appl. Phys. 77 4504