Thermal annealing effect on the photoluminescence properties of unstrained GaInAsSb/InP single quantum well grown by MOVPE

Materials Chemistry and Physics

Volumn 85, Issue 2-3, 2004, Pages 263-265

  Su, Yan Kuin ^a   Wu, Cheng Hsien ^a   Chang, Jia Rong ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

GaInAsSb; InP; MOVPE; Quantum well

Indexed keywords

ANNEALING; DOPING (ADDITIVES); MASS SPECTROMETRY; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THICKNESS MEASUREMENT; X RAY DIFFRACTION;

GAINASSB; INP; THERMAL ANNEALING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 1942516371     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2003.12.010     Document Type: Article

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