Doping effects of rare earth on dielectric properties of fine-grained BaTiO3-based ceramics

Journal of Rare Earths

Volumn 21, Issue 6, 2003, Pages 641-644

  Li, Lingxia ^a   Guo, Wei ^a   Wu, Xiawan ^a   Wang, Hongru ^a   Zhang, Zhiping ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

Dielectric strength; Er2O3; Fine grain effect; Ho2O3; Inorganic materials; Rare earths

Indexed keywords

CRYSTAL LATTICES; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; RARE EARTHS;

DIELECTRIC CONSTANT; DOPING EFFECTS; ERBIUM OXIDE; FINE GRAINED EFFECT; HOLMIUM OXIDE; INORGANIC MATERIALS; NONFERROELECTRIC PHASES; RARE EARTH OXIDES;

DIELECTRIC PROPERTIES;

EID: 1942508855     PISSN: 10020721     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (3)

1. Hamaji Y, Wada H, Tomono K. Effect of rare earth oxides on X7R dielectrics [A]. Proceedings of the Seventh US-Japan Seminar on Dielectric and Piezoelectric Ceramics [C]. 1995. 14; Tsukuba, Japan. Tsukuba; 1995, IV-5: 273
2. 3 ceramics fired in reducing atmosphere [J]. Japan. J. Appl. Phys., 1994, 33: 5393.
3. Nomura T, Kawano N, Yamamatu J, et al. Aging behavior of Ni-electrode multilayer ceramic capacitors with X7R characteristics [J]. Jpn. J. Appl. Phys., 1995, 34: 5389.