Terahertz emission from the structures containing low-temperature-grown GaAs layers

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Krotkus, A ^a   Bertulis, K ^a   Lui, Kai ^b   Xu, J ^b   Zhang, X C ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON TRAPS; FERMI LEVEL; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY;

ELECTRON DYNAMICS; TERAHERTZ EMISSIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1942484306     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/148     Document Type: Conference Paper

References (6)

1. Zhang X-C, Jin Y and Ma X 1992 Appl. Phys. Lett. 61 2764
2. Zhang X-C and Auston D H 1992 J. Appl. Phys. 71 326
3. Dekorsy T, Auer H, Bakker H J, Roskos H G and Kurtz H 1996 Phys. Rev. E 53 4005
4. Kersting R, Unterrainer K, Strasser G, Kaufmann H F and Gornik E 1997 Phys. Rev. Lett. 79 3038
5. Darmo J, Strasser G, Mueller T, Bratschitsch R and Unterrainer K 2002 Appl. Phys. Lett. 81 871
6. Krotkus A, Bertulis K, Dapkus L, Olin U and Marcinkevicius S 1999 Appl. Phys. Lett. 65 3336