Reduction of Carbon Impurity in Silicon Nitride Films Deposited from Metalorganic Source

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 2 A, 2004, Pages

  Taguchi, Kohshi ^a   Yoshimoto, Masahiro ^a   Saraie, Junji ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Atomic nitrogen; Carbon concentration; Hexamethyldisilazane; Radical beam deposition; Silicon nitride; SIMS

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); ELLIPSOMETRY; ORGANOMETALLICS; PERMITTIVITY; SECONDARY ION MASS SPECTROMETRY; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC NITROGEN; CARBON CONCENTRATION; HEXAMETHYLDISILIZANE; RADICAL BEAM DEPOSITION;

SILICON NITRIDE;

EID: 1942475865     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l148     Document Type: Article

References (8)

1. C. Y. Chang and S. M. Sze: ULSI Technology (McGraw-Hill, New York, 1996) p. 216.
2. D. L. Smith, A. S. Alimonda, C. C. Chen, S. E. Ready and B. Wacker: J. Electrochem. Soc. 137 (1990) 614.
3. C. Wu: J. Phys. Chem. 91 (1987) 5054.
4. M. Yoshimoto, K. Takubo, T. Ohtsuki, M. Komoda and H. Matsunami: J. Electrochem. Soc. 142 (1995) 1976.
5. I. Kleps, F. Caccavale, G. Brusatin, A. Angelescu and L. Armelao: Vacuum 46 (1995) 979.
6. M. T. Kim and J. Lee: Thin Solid Films 303 (1997) 173.
7. Y. Hatanaka, K. Kitamura, S. Wickramanayaka, Y. Nakanishi and J. Tyczkowski: Proc. 6th Int. Conf. Silicon Carbide & Related Materials Kyoto, 1995 (IOP, Bristol, 1996) Conf. Ser. Vol. 142, p. 1055.
8. H. Dun, P. Pan, F. R. White and R. W. Douse: J. Electrochem. Soc. 128 (1981) 1555.