Rabi oscillations of intersubband transitions in GaAs/AlGaAs MQWs

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Luo, C W ^a   Reimann, K ^a   Woerner, M ^a   Elsaesser, T ^a   Hey, R ^b   Ploog, K H ^b  

^a MAX BORN INSTITUT   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTROOPTICAL EFFECTS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSIENTS;

ELECTRO-OPTIC SAMPLING; RABI OSCILLATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1942451968     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/095     Document Type: Conference Paper

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