Initial stage of Schottky barrier formation of ferromagnetic MnSb(0001) films on GaAs(111)B

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 892-898

  Oshima, M ^a   Shuzo, M ^a   Ono, K ^a   Fujioka, H ^a   Watanabe, Y ^a   Miyanishi, S ^a   Akinaga, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; FILM GROWTH; PHOTOELECTRON SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (TEM); HETEROEPITAXIAL GROWTH; SCHOTTKY BARRIER HEIGHT (SBH);

MAGNETIC THIN FILMS;

EID: 19244383713     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00172-X     Document Type: Article

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