메뉴 건너뛰기




Volumn 117-118, Issue , 1997, Pages 776-780

Characterization of InP δ-doped with Er by FFT photoreflectance

Author keywords

Electric field; Erbium; InP; Photoreflectance; doping

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; ERBIUM; FAST FOURIER TRANSFORMS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

EID: 19244371410     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80181-X     Document Type: Article
Times cited : (7)

References (15)
  • 5
    • 0001720790 scopus 로고
    • M. Balkanski (Ed.), North-Holland, Amsterdam
    • D.E. Aspnes, in: M. Balkanski (Ed.), Handbook on Semiconductors, North-Holland, Amsterdam, 1980, Vol. 2.
    • (1980) Handbook on Semiconductors , vol.2
    • Aspnes, D.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.