MBE growth and structural characterization of Si1 - yCy/Si1 - xGex superlattices

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 459-464

  Zerlauth, S ^a   Stangl, J ^a   Darhuber, A A ^a   Holy V ^a,b   Bauer, G ^a   Schaffler F ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b MASARYK UNIVERSITY   (Czech Republic)

Author keywords

AFM; Carbon; Germanium; Interface roughness; MBE; Silicon; Superlattice; X ray defraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; COMPOSITION EFFECTS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

X RAY REFRACTION (XRR);

SEMICONDUCTOR SUPERLATTICES;

EID: 19244369584     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00931-1     Document Type: Article

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