Structure and energetics of As dimers on GaAs:(chalcogen) (001) surfaces and GaAs/Te/InAs interface

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 449-453

  Miwa, R H ^a   Ferraz, A C ^b  

^a FEDERAL UNIVERSITY OF UBERLÂNDIA   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ARSENIC; BAND STRUCTURE; INTERFACES (MATERIALS); MONOLAYERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE;

CHALCOGEN ATOMS; DIMERS; EXOTHERMIC PROCESS;

SURFACE PHENOMENA;

EID: 19244366903     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00555-2     Document Type: Article

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