Analysis of the mechanism and characteristic for the transparent anode in a gate commutated thyristor

Wuli Xuebao/Acta Physica Sinica

Volumn 54, Issue 5, 2005, Pages 2296-2301

  Wang, Cai Lin ^a   Gao, Yong ^a   Ma, Li ^a   Zhang, Chang Li ^b   Kim, Eundong ^b   Kim, Sangcheol ^b  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Gate commutated thyristor; Injection efficiency; Power semiconductor devices; Transparent anode

Indexed keywords

EID: 19044391818     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)