Critical analysis of the Virtual Crystal Approximation

Brazilian Journal of Physics

Volumn 27, Issue 4, 1997, Pages 299-304

  Dargam, T G ^a   Capaz, R B ^a   Koiller, Belita ^a  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 19044377855     PISSN: 01039733     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Bastard G., Brum J. A. and Ferreira R., Solid State Physics, edited by D. Turnbull and H. Ehrenreich, vol. 44 (Academic, New York, N.Y.) 1991, p.229;
2. G. Bastard, Wave mechanics applied to semiconductor heterostructures, Les editions de Physique, 1988.
3. M.G. Burt, J.Phys.: Condens. Matter 4 (1992) 6651-6690.
4. B. Koiller and R.B. Capaz, Phys. Rev. Lett., 74, 769 (1995);
5. R. B. Capaz, J. P. von der Weid and B. Koiller, Appl. Phys. Lett. 60, 704 (1992).
6. P. Vogl, H. P. Hjalmarson, and J. D. Dow, J. Phys. Chem. Solids 44, 365 (1983).
7. S. Vlaev, V.R. Velasco and F. García-Moliner, Physical Review B 50, 4577 (1994).
8. The order parameter was conveniently chosen to be the dipole moment squared of the optical transition between band edges. When properly normalized, this quantity varies from 1 (order) for direct-gap GaAs to 0 (disorder) for indirect-gap AlAs.
9. The tight-binding parametrization adopted produces a degeneracy along the X-W line for both GaAs and AlAs.