Diffusion of ion implanted As in Si1-xGex epilayers

Chinese Physics Letters

Volumn 14, Issue 1, 1997, Pages 51-54

  Zou, Lü Fan ^a   Zou, Lyu Fan ^a   Wang, Zhan Guo ^a   Sun, Dian Zhao ^a   Fan, Ti Wen ^a   Liu, Xue Feng ^a   Zhang, Jing Wei ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; ION IMPLANTATION; SEMICONDUCTOR ALLOYS; SI-GE ALLOYS;

ANNEALING TEMPERATURES; GE FRACTION; GE-CONTENT; ION IMPLANTED;

DIFFUSION;

EID: 18944395148     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/14/1/014     Document Type: Article

References (16)

1. B. S. Meyerson, IBM. J. Res. Dev. 34 (1990) 806.
2. M. Arienzo, J. Comfort, E. F. Crabbe, D. L. Harame, S. S. Iyer, V. P. Kesan, B. S. Meyerson, G. L. Patton, J. M. C. Stork and Y. C. Sun, Microelectron. Eng. 19 (1992) 519.
3. A. Nylandsted Larsen, S. Yu. Shiryaev, E. Schwartz Sørensen and P. Tidemand Petersson, Appl. Phys. Lett. 48 (1986) 1805.
4. A. Armigliato and A. Parisini, J. Mater. Res. 6 (1991) 1701.
5. D. Nobili, S. Solmi, A. Parisini, M. Derdour and A. Armigliato, Phys. Rev. B 49 (1994) 2477.
6. T. W. Fan, A. Nejim, J. P. Zhang, Z. G. Wang, P. L. F. Hemment and D. Chescoe, Appl. Phys. Lett. 66 (1995) 1117.
7. Lyu-fan Zou, Z. G. Wang, D. Z. Sun, J. W. Zhang, X. F. Liu, M. Y. Kong and L. Y. Lin, in Proceedings of the Third International Conference on Nonlinear Optical Physics and Applications, Harbin (1995) p. 12.
8. Lyu-fan Zou, Z. G. Wang, D. Z. Sun, J. W. Zhang, X. F. Liu, S. R. Zhu, J. P. Li, M. Y. Kong and L. Y. Lin, in Proceedings of the Third National Conference on Molecular Beam Epitaxy, Jiande (1995) p.118.
9. E. A. Fitzgerald, Y. H. Xie, D. Monroe, D. J. Saverman, J. M. Kuo, A. R. Kortan, F. A. Thiel and B. E. Weir, J. Vac. Sci. Technol. 10 (1992) 1807.
10. S. M. Sze, Semiconductor Device, Physics and Technology (John Wiley & Sons, New York, 1985) Chap. 10, p. 409.
11. H. Maes, W. Vandervorst and R. Van Overstraeten, in Impurity Doping Processes in Silicon, edited by F. F. Y. Wang (North-Holland, Amsterdam, 1981) p. 474.
12. C. C. Lee, M. D. Deal and J. C. Bravman, Appl. Phys. Lett. 66 (1995) 355.
13. M. Y. Tsai, F. F. Morehead, J. E. E. Baglin and A. E. Michel, J. Appl. Phys. 51 (1980) 3230.
14. T. E. Seidel, C. S. Pai, D. J. Lischner, D. M. Maher, R. V. Knoell, J. S. Williams, B. R. Penumalli and D. C. Jacobson, Mater. Res. Soc. Symp. Proc. 35 (1985) 329.
15. F. A. Trumbore, Bell Syst. Tech. J. 38 (1960) 205.
16. V. S. Tishkov, P. I. Gaiduk, S. Yu. Shiryaev and A. Nylandsted Larsen, Appl. Phys. Lett. 68 (1996) 655.