The evolution of self-ordered quantum dot heterostructures grown on non-planar GaAs {111}B substrates

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 329-334

  Hartmann, A ^a   Loubies, L ^a   Reinhardt, F ^a   Gustafsson, A ^a   Sadeghi, A ^a   Kapon, E ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDE;

HETEROJUNCTIONS;

EID: 18844482878     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00453-4     Document Type: Article

References (12)

1. E. Kapon, in: Semiconductors and Semimetals, vol. 40, Academic Press, San Diego, 1994, p. 259.
2. A. Gustafsson, F. Reinhardt, G. Biasiol, E. Kapon, Appl. Phys. Lett. 67 (1995) 3673.
3. Y. Sugoyama, Y. Sakuma, S. Muto, N. Yokoyama, Appl. Phys. Lett. 67 (2) (1995) 256.
4. A. Hartmann, L. Loubies, F. Reinhardt, E. Kapon, Appl. Phys. Lett. 71 (10) (1997) 1314.
5. H. Drexler, D. Leonard, W. Hansen, J.P. Kotthaus, P.M. Petroff, Phys. Rev. Lett. 73 (1994) 2252.
6. J. Oshinowo, M. Nishioku, S. Ishida, Y. Arakawa, Appl. Phys. Lett. 65 (11) (1994) 1421.
7. J.-Y. Marzin, J.-M. Gérard, A. Izraël, D. Barrier, G. Bastard, Phys. Rev. Lett. 73 (5) (1994) 716.
8. S. Fafard, D. Leonard, J.L. Merz, P.M. Petroff, Appl. Phys. Lett. 65 (11) (1994) 1388.
9. D.J. Eagiesham, M. Cerullo, Phys. Rev. Lett. 64 (16) (1990) 1943.
10. F. Reinhardt, B. Dwir, E. Kapon, Appl. Phys. Lett. 68 (1996) 3168.
11. G. Biasiol, F. Reinhardt, A. Gustafsson, E. Martinet, E. Kapon, Appl. Phys. Lett. 69 (1996) 2710.
12. M. Ikegami, Y. Nagoaka, Surf. Sci. 263 (1992) 193.