Formation of epitaxial diamond particles on (001) β-SiC surface in ECR system

New Diamond and Frontier Carbon Technology

Volumn 6, Issue 5, 1996, Pages 265-276

  Maréchal, Nadine ^a   Ishikura, Takefumi ^a   Yamashita, Satoshi ^a  

^a TOKYO GAS CO LTD   (Japan)

Author keywords

SiC surface; Bias enhanced nucleation; CVD diamond; ECR microwave CVD

Indexed keywords

EID: 18844482835     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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