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Volumn 30, Issue SUPPL. PART 1, 1997, Pages

Progress in epitaxial growth of SiC and its electronic devices

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EID: 18844460413 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (2)

References (13)

1
- 0026154377
- R. J. Trew, J. B. Yan and P. M. Mock, Proc. IEEE 79, 598 (1991).
- (1991) Proc. IEEE , vol.79 , pp. 598
- Trew, R.J.¹ Yan, J.B.² Mock, P.M.³

2
- 0028485501
- B. J. Baliga, Proc. IEEE 82, 1112 (1994).
- (1994) Proc. IEEE , vol.82 , pp. 1112
- Baliga, B.J.¹

3
- 0028447880
- M. Ruff, H. Mitlehner and R. Helbig, IEEE Electron De-vices 41, 1040 (1994).
- (1994) IEEE Electron De-vices , vol.41 , pp. 1040
- Ruff, M.¹ Mitlehner, H.² Helbig, R.³

4
- 0023531069
- Tokyo
- N. Kuroda, K. Shibahara, W. S. Yoo, S. Nishino and H. Matsunami, Ext. Abstr. the 19th Conf. on Solid State Devices and Materials (Tokyo, 1987), p. 227.
- (1987) Ext. Abstr. the 19th Conf. on Solid State Devices and Materials , pp. 227
- Kuroda, N.¹ Shibahara, K.² Yoo, W.S.³ Nishino, S.⁴ Matsunami, H.⁵

5
- 0009314376
- H. S. Kong, J. T. Glass and R. F. Davis, J. Appl. Phys. 64, 2672 (1988).
- (1988) J. Appl. Phys. , vol.64 , pp. 2672
- Kong, H.S.¹ Glass, J.T.² Davis, R.F.³

6
- 0001072754
- J. A. Powell, D. J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang and P. Pirouz, Appl. Phys. Lett. 56, 1442 (1990).
- (1990) Appl. Phys. Lett. , vol.56 , pp. 1442
- Powell, J.A.¹ Larkin, D.J.² Matus, L.G.³ Choyke, W.J.⁴ Bradshaw, J.L.⁵ Henderson, L.⁶ Yoganathan, M.⁷ Yang, J.⁸ Pirouz, P.⁹

7
- 0001548648
- S. Karmann, W. Suttrop, A. Schöner, M. Schadt, C. Haberstroh, F. Engelbrecht, R. Helbig, G. Pensl, R. A. Stein and S. Leibenzeder, J. Appl. Phys. 72, 5437 (1992).
- (1992) J. Appl. Phys. , vol.72 , pp. 5437
- Karmann, S.¹ Suttrop, W.² Schöner, A.³ Schadt, M.⁴ Haberstroh, C.⁵ Engelbrecht, F.⁶ Helbig, R.⁷ Pensl, G.⁸ Stein, R.A.⁹ Leibenzeder, S.¹⁰

8
- 0028752712
- O. Kordina, A. Henry, C. Hallin, R. C. Glass, A. O. Konstantinov, C. Hemmingsson, N. T. Son and E. Janzen, Mat. Res. Soc. Sympo. Proc. 339, 405 (1994).
- (1994) Mat. Res. Soc. Sympo. Proc. , vol.339 , pp. 405
- Kordina, O.¹ Henry, A.² Hallin, C.³ Glass, R.C.⁴ Konstantinov, A.O.⁵ Hemmingsson, C.⁶ Son, N.T.⁷ Janzen, E.⁸

9
- 0006281025
- Inst. of Phys. Bristol
- A. A. Burk, Jr, D. L. Barrett, H. M. Hobgood, R. R. Siergiej, T. T. Braggins, R. C. Clarke, G. W. Eldridge, C. D. Brandt, D. J. Larkin, J. A. Powell and W. J. Choyke, Silicon Carbide and Related Materials (Inst. of Phys. Bristol, 1994), p. 29.
- (1994) Silicon Carbide and Related Materials , pp. 29
- Burk Jr., A.A.¹ Barrett, D.L.² Hobgood, H.M.³ Siergiej, R.R.⁴ Braggins, T.T.⁵ Clarke, R.C.⁶ Eldridge, G.W.⁷ Brandt, C.D.⁸ Larkin, D.J.⁹ Powell, J.A.¹⁰ Choyke, W.J.¹¹

10
- 0029232973
- R. Rupp, P. Lanig, J. Völkel and D. Stephani, J. Crystal Growth 146, 37 (1995).
- (1995) J. Crystal Growth , vol.146 , pp. 37
- Rupp, R.¹ Lanig, P.² Völkel, J.³ Stephani, D.⁴

11
- 0025475910
- T. Udea, H. Nishino and H. Matsunami, J. Crystal Growth 104, 695 (1990).
- (1990) J. Crystal Growth , vol.104 , pp. 695
- Udea, T.¹ Nishino, H.² Matsunami, H.³

12
- 36449006138
- T. Kimoto, H. Nishino, W. S. Yoo and H. Matsunami, J. Appl. Phys. 73, 726 (1993).
- (1993) J. Appl. Phys. , vol.73 , pp. 726
- Kimoto, T.¹ Nishino, H.² Yoo, W.S.³ Matsunami, H.⁴

13
- 0000585113
- T. kimoto and H. Matsunami, J. Appl. Phys. 75, 850 (1994).
- (1994) J. Appl. Phys. , vol.75 , pp. 850
- Kimoto, T.¹ Matsunami, H.²

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