Ion implanted GaAs/InGaAs lateral injection ridge QW laser for OEICs: Study of operation mechanisms

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 387-390

  Tager, A A ^a   Gaska, R ^b,c   Avrutsky, L A ^a   Fay, M ^a   Chik, H ^a   Springthorpe, A ^d   Husain, Z ^d   Xu, J M ^a   Shur, M ^e  

^a UNIVERSITY OF TORONTO   (Canada)

^b University of Virginia   (United States)

^c APA Optronics   (United States)

^d NORTEL NETWORKS   (Canada)

^e RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; ION IMPLANTATION; OPTOELECTRONIC DEVICES; RIDGE WAVEGUIDES; TEMPERATURE DISTRIBUTION;

DIFFERENTIAL RESISTANCES; ELECTRICAL MEASUREMENT; INVERSE TEMPERATURES; LASER CHARACTERISTICS; LATERAL CURRENT INJECTIONS; OPERATION MECHANISM; RIDGE WAVEGUIDE LASERS; WIDE TEMPERATURE RANGES;

SEMICONDUCTOR LASERS;

EID: 18844444294     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711668     Document Type: Conference Paper

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