Fabrication and characteristics of 0.2-μm Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic HEMTs with wide-head T-shaped multifinger gates

Journal of the Korean Physical Society

Volumn 29, Issue 2, 1996, Pages 234-238

  Yoon, Hyung Sup ^a   Lee, Jin Hee ^a   Choi, Sang Soo ^a   Park, Chul Soon ^a   Pyun, Kwang Eui ^a   Park, Hyung Moo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18844424750     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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