Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector

2004 1st IEEE International Conference on Group IV Photonics

Volumn , Issue , 2004, Pages 142-144

  Yamada, A ^a   Sakuraba, M ^a   Murota, J ^a   Wada, K ^b,c   Kimerling, L C ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; LIGHT ABSORPTION; LIGHT EMITTING DIODES; LIGHT PROPAGATION; PHOTODETECTORS; PHOTODIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON NITRIDE; SILICON ON INSULATOR TECHNOLOGY; THICK FILMS;

BENDING LOSS; BENDING RADIUS; LIGHT EMITTERS; PHOTO DETECTION;

OPTICAL WAVEGUIDES;

EID: 18844413300     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. L. C. Kimerling, Appl. Surf. Sci., 159, 8 (2000).
2. A. Yamada, M. Sakuraba, J. Murota, Second International SiGe Technology and Device Meeting (ISTDM 2004), Frankfurt (Oder), Germany, May 16-19 (2004).
3. M. Ruff, M. Fick, R. Lindner, U. Rössler, and R. Heibig, J. Appl. Phys., 74, 267 (1993).
4. Th. Dittrich, V. Yu. Timoshenko, J. Rappich, and L. Tsybeskov, J. Appl. Phys., 90, 2310 (2001).
5. A.Yamada, T.Matsuura, J.Murota, E.Tamechika, K.Wada, and L.C.Kimerling, 2002 Spring Meeting, The European Materials Research Society, Symposium: H, Symposium Si-based Optoelectronics: Advances and Future Perspectives, Strasbourg, France, June 18-21, (2002) p
6. M. Saito, M. Sakuraba, J. Murota, The 7th Int. Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSEN-7), Nara, Japan, Nov. 16-20 (2003) p.212.