High mobility electron-transport material based on 2,5-dibenzthiazolyl thiophene

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Mohammad, Qureshi ^a   Manoharan, S Sundar ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

2,5-DIBENZTHIAZOLYL THIOPHENE (TBZT); HIGHEST OCCUPIED MOLECULAR ORBITALS (HOMO); LOWEST UNOCCUPIED MOLECULAR ORBITALS (LUMO); ORGANIC LIGHT EMITTING DIODES (OLED); STANDARD CALOMEL ELECTRODES (SCE);

CURRENT VOLTAGE CHARACTERISTICS; CYCLIC VOLTAMMETRY; ELECTRIC EXCITATION; ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; LIGHT EMITTING DIODES;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 18844402657     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1881791     Document Type: Article

References (23)

1. M. G. Kane, IEEE Electron Device Lett. 21, 534 (2000).
2. G. H. Gelinck, T. C. T. Geuns, and D. M. de Leeuw, Appl. Phys. Lett. 77, 1487 (2000).
3. C. W. Tang and S. A. Vanslyke, Appl. Phys. Lett. 1, 913 (1997).
4. J. H. Burroghes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burn, and A. B. Holmes, Nature (London) 347, 549 (1990).
5. J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, Science 273, 884 (1996).
6. J. Kido, K. Hongawa, K. Okuyama, and K. Nagai, Appl. Phys. Lett. 64, 815 (1994).
7. G. Gu, G. Parthasarathy, P. Tian, P. E. Burrows, and S. R. Forrest, J. Appl. Phys. 86, 4076 (1999).
8. Y. He, S. Gong, R. Hattori, and J. Kanicki, Appl. Phys. Lett. 74, 2265 (1999).
9. T. P. Nguyen, P. Jonnard, F. Vernard, P. F. Staub, J. Thiion, M. Lapkowski, and V. H. Tran, Synth. Met. 75, 175 (1995).
10. Y. Hamada, T. Sano, H. Fujii, Y. Nishio, K. Takahashi, and K. Shibata, Jpn. J. Appl. Phys., Part 2 35, L1339 (1996).
11. X. H. Zhang, O. Y. Wong, Z. Q. Gao, C. S. Lee, H. L. Kwong, S. T. Lee, and S. K. Wu, Mater. Sci. Eng., B 85, 182 (2001).
12. F. Garnier, A. Yassar, R. Hajlaoui, G. Horowitz, F. Deloffre, B. Server, S. Ries, and P. Alnot, J. Am. Chem. Soc. 115, 8716 (1993).
13. P. Bäuerle, U. Mitschke, G. Gruener, and G. Rimmel, Pure Appl. Chem. 71, 2153 (1999).
14. J. Caldas, E. Pettenati, G. Goldoni, and E. Molinari, Appl. Phys. Lett. 79, 2505 (2001).
15. H. Baessler, Phys. Status Solidi B 175, 15 (1993).
16. E. Muller-Horsche, D. Haarer, and H. Scher, Phys. Rev. B 35, 1273 (1987).
17. I. H. Campbell, D. L. Smith, C. J. Neef, and J. P. Ferraris, Appl. Phys. Lett. 74, 2809 (1999).
18. B. Demrcq, C. Grasso, J.-L. Maldonado, M. Halik, S. Barlow, S. R. Marder, and B. Kippelen, J. Phys. Chem. B 108, 8647 (2004).
19. D. Poplavskyy, T. Kreouzis, A. Campbell, J. Nelson, and D. D. C. Bradley, Mater. Res. Soc. Symp. Proc. 725, P1.4.1 (2002).
20. Z. G. Yu, D. L. Smith, A. Saxena, R. L. Martin, and A. R. Bishop, Phys. Rev. Lett. 84, 721 (2000).
21. J. P. J. Markham, T. D. Anthopoulos, I. D. W. Samuel, G. J. Richards, and H. Baessler, Appl. Phys. Lett. 81, 3266 (2002).
22. Y. N. Mahapatra, S. P. Singh, S. S. Manoharan, and M. Qureshi, Indian Patent No. 1774DEL2004.
23. M. Qureshi, S. Sundar Manoharan, S. P. Singh, and Y. N. Mahapatra, Solid State Commun. 133, 305 (2005).