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Volumn , Issue , 2004, Pages 21-28

On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices

Author keywords

Dispersive phenomena; Field effect transistors; Large signal modeling; Semiconductor device characterisation

Indexed keywords

BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; ENERGY DISSIPATION; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

EID: 18844393950     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (10)
  • 7
    • 0029703299 scopus 로고    scopus 로고
    • Low-frequency dispersion and its influence on the Intermodulation performance of AlGaAs/GaAs HBTs
    • K.Lu, P.McIntosh, C.M.Snowden, R.D.Pollard, "Low-Frequency dispersion and its influence on the Intermodulation performance of AlGaAs/GaAs HBTs". IEEE MTT-S Digest, 1996.
    • (1996) IEEE MTT-S Digest
    • Lu, K.1    Mcintosh, P.2    Snowden, C.M.3    Pollard, R.D.4
  • 8
    • 0031210586 scopus 로고    scopus 로고
    • A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena
    • T.Roh, Y.Kim, Y.Suh, W.Park, B.Kim, "A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena", IEEE Trans. on MTT, 1997, Vol.45, N.8.
    • (1997) IEEE Trans. on MTT , vol.45 , Issue.8
    • Roh, T.1    Kim, Y.2    Suh, Y.3    Park, W.4    Kim, B.5
  • 9
    • 0023984067 scopus 로고    scopus 로고
    • Low-field low-frequency dispersion of transconductance in GaAs Mesfet's with implications for other rate-dependent anomalies
    • March 88
    • P.H.Ladbrooke, S.R.Blight, : "Low-Field Low-Frequency Dispersion of Transconductance in GaAs Mesfet's with Implications for Other Rate-Dependent Anomalies". IEEE Transactions On Electron Devices, Vol.35 No.3 March 88.
    • IEEE Transactions on Electron Devices , vol.35 , Issue.3
    • Ladbrooke, P.H.1    Blight, S.R.2
  • 10
    • 0035394223 scopus 로고    scopus 로고
    • Characterisation of thermal and frequency-dispersion effects in GaAs MESFET devices
    • July
    • J.Rodriguez-Tellez, T.Fernandez, A.Mediavilla, A.Tazon, "Characterisation of Thermal and Frequency-Dispersion Effects in GaAs MESFET Devices", IEEE Trans. on MTT, Vol.49, No.7, July 2001.
    • (2001) IEEE Trans. on MTT , vol.49 , Issue.7
    • Rodriguez-Tellez, J.1    Fernandez, T.2    Mediavilla, A.3    Tazon, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.