Erratum: Sexithiophene films on clean and oxidized Si(111) surfaces: Growth and electronic structure (Journal of Applied Physics (2004) 96 (2716))

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Ivanco, J ^a,d   Krenn, J R ^a   Ramsey, M G ^a   Netzer, F P ^a   Haber, T ^b   Resel, R ^b   Haase, A ^c   Stadlober, B ^c   Jakopic, G ^c  

^a UNIVERSITY OF GRAZ   (Austria)

^b GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^c JOANNEUM RESEARCH   (Austria)

^d INSTITUTE OF PHYSICS   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18844390478     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1879086     Document Type: Erratum

References (0)