Growth of amorphous silicide during Ti/Si interfacial reactions in multilayer thin films

Materials Science and Engineering: A

Volumn 398, Issue 1-2, 2005, Pages 60-65

  Ma, E ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

Amorphization; Interfacial reactions; Multiplayer; Self propagating exothermic reaction; Thin film diffusion couple; Ti Si

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); INTERFACES (MATERIALS); MULTILAYERS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM DEPOSITED COATINGS;

AMORPHOUS SILICIDE; INTERLAYERS; METASTABLE ALLOYS; THIN-FILM DIFFUSION;

AMORPHOUS SILICON;

FILM;

EID: 18844366164     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2005.02.059     Document Type: Article

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