Positron Annihilation Studies of Defects at the SiO2/SiC Interface

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 543-546

  Dekker, James ^a   Saarinen, Kimmo ^a   Olafsson, Halldór Ö ^b   Sveinbjörnsson, Einar Ö ^b  

^a AALTO UNIVERSITY   (Finland)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Interface; Open Volume Defects; Positron Annihilation; Silicon Dioxide

Indexed keywords

CARRIER CONCENTRATION; INTERFACES (MATERIALS); POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE;

CAPACITANCE VOLTAGE CHARACTERISTICS;

CRYSTAL DEFECTS;

EID: 18744433991     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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