Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method

Solar Energy Materials and Solar Cells

Volumn 41-42, Issue , 1996, Pages 529-536

  Siebke, F ^a   Stiebig, H ^a   Abo Arais, A ^a   Wagner, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; COMPUTER SIMULATION; ELECTRON ABSORPTION; ELECTRON EMISSION; ENERGY GAP; FERMI LEVEL; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY;

CAPTURE; CHARGE STATE; CONSTANT PHOTOCURRENT METHOD; ENERGETIC DEFECT DISTRIBUTION; INTEGRATED DEFECT DENSITY; LIGHT SOAKING; OPTICAL TRANSITIONS; RECOMBINATION PROCESS; SUB BANDGAP ILLUMINATION; VALENCE BAND TAIL;

ELECTRONIC DENSITY OF STATES;

EID: 18744431613     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(95)00140-9     Document Type: Article

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