Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 107-112

  Niu, Guofu ^a   Juraver, Jean B ^b   Borgarino, Mattia ^b   Jin, Zhenrong ^a   Cressler, John D ^a   Plana, Robert ^b   Llopis, Olivier ^b   Mathew, Suraj ^a   Zhang, Shiming ^a   Clark, Steve ^c   Joseph, Alvin J ^d  

^a AUBURN UNIVERSITY   (United States)

^b LAAS CNRS   (France)

^c NAVAL SURFACE WARFARE CENTER   (United States)

^d IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC SPACE CHARGE; GAMMA RAYS; IRRADIATION; NONLINEAR OPTICS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

GAMMA IRRADIATIONS; NONLINEARITY-CANCELLATION METHODS; RADIATION-INDUCED DEFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 18744418888     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00233-1     Document Type: Article

References (7)

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