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Volumn 92, Issue 9, 2002, Pages 5252-5258

High resolution minority carrier transient spectroscopy of Si/SiGe/Si quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL APPROACH; CAPACITANCE TRANSIENT; DEFECT STATE; DEPLETION REGION; EMISSION PROPERTIES; EMISSION RATES; GAS SOURCES; HIGH RESOLUTION; HIGH-RESOLUTION TECHNIQUES; LAPLACE DEEP LEVEL TRANSIENT SPECTROSCOPIES; LIGHT PULSE; MINORITY CARRIER; MINORITY CARRIER TRANSIENT SPECTROSCOPIES; MULTIQUANTUM WELLS; N TYPE SILICON; P-TYPE SILICON; SI/SIGE; SIGE QUANTUM WELLS; STRAINED QUANTUM WELLS; STRONG CONTRAST; TEMPERATURE DEPENDENCE; THEORETICAL PREDICTION; TWO-STATE;

EID: 18744402554     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1511824     Document Type: Article
Times cited : (3)

References (27)
  • 1
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    • jaJAPIAU 0021-8979
    • D. V. Lang, J. Appl. Phys. 45, 3023 (1974). jap JAPIAU 0021-8979
    • (1974) J. Appl. Phys. , vol.45 , pp. 3023
    • Lang, D.V.1
  • 10
    • 0001016003 scopus 로고    scopus 로고
    • apl APPLAB 0003-6951
    • P. Deixler et al., Appl. Phys. Lett. 73, 3126 (1998). apl APPLAB 0003-6951
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 3126
    • Deixler, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.