A novel dynamic memory cell with internal voltage gain

IEEE Journal of Solid-State Circuits

Volumn 40, Issue 4, 2005, Pages 884-894

  Luk, Wing K ^a   Dennard, Robert H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Dynamic memory; Gain cell; Gated diode; Memory cell with internal voltage gain; Nondestructive read; Nonlinear capacitor; Nonlinear voltage boosting

Indexed keywords

CAPACITANCE; CAPACITORS; DIODES; ELECTRIC POTENTIAL; MOS DEVICES; SIGNAL PROCESSING; THICKNESS MEASUREMENT;

DYNAMIC MEMORY; GAIN CELL; GATED DIODES; MEMORY CELL WITH INTERNAL VOLTAGE GAIN; NONLINEAR CAPACITORS; NONLINEAR VOLTAGE BOOSTING;

GAIN MEASUREMENT;

EID: 18744392027     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.842854     Document Type: Conference Paper

References (4)

1. R. H. Dennard, "Field-effect transistor DRAM," U.S. Patent 3,387,286, June 4, 1968.
2. J. A. Karp et al., "A 4096-bit dynamic MOS RAM," in IEEE ISSCC Dig. Tech. Papers, Feb. 1972, pp. 10-11.
3. A. S. Grove, Physics and Technology of Semiconductor Devices. New York: Wiley, 1967.
4. W. K. Luk and R. H. Dennard, "Gated diode amplifiers," IEEE Trans. Circuits Syst. II: Express Briefs, vol. 52, no. 5, May 2005.