Theoretical analysis of multi-transverse-mode characteristics of vertical-cavity surface-emitting lasers

Semiconductor Science and Technology

Volumn 20, Issue 6, 2005, Pages 505-513

  Li, Xiaofeng ^a   Pan, Wei ^a   Luo, Bin ^a   Ma, Dong ^a   Deng, Guo ^a  

^a SOUTHWEST JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; ELECTRIC CURRENTS; EPITAXIAL GROWTH; FINITE DIFFERENCE METHOD; MODULATION; OPTICAL SWITCHES; SEMICONDUCTOR QUANTUM WELLS;

CARRIER DIFFUSION; MULTI-TRANSVERSE-MODE; SPATIAL HOLE BURNING (SHB); VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

LASER APPLICATIONS;

EID: 18744390491     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/6/005     Document Type: Article

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