Highly anisotropic etching of phase shift masks using ICP of CF4-SF6-CHF3 gas mixtures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 303-311

  Choi, Se Jong ^a   Cha, Han Sun ^a   Yoon, Si Yeul ^a   Kim, Yong Dae ^a   Lee, Dong Hyuk ^a   Kim, Jin Min ^a   Kim, Jin Su ^b   Min, Dong Soo ^b   Jang, Pil Jin ^b   Chang, Byung Soo ^b   Kwon, Hyuk Joo ^b   Choi, Boo Yeon ^b   Choi, Sang Soo ^a   Hong Jeong, Soo ^a  

^a Photomask R and D Center   (South Korea)

^b PKL Photronics   (South Korea)

Author keywords

Anisotropy; CHF3; MoSiON; Phase shift mask; SF6; Sidewall passivation; Surface roughness

Indexed keywords

ANISOTROPY; MASKS; MIXTURES; PASSIVATION; PHASE SHIFT; SURFACE ROUGHNESS;

PHASE SHIFT LAYERS;

PLASMA ETCHING;

EID: 18744380971     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476984     Document Type: Conference Paper

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