Gated-Diode Amplifiers

IEEE Transactions on Circuits and Systems II: Express Briefs

Volumn 52, Issue 5, 2005, Pages 266-270

  Luk, Wing K ^a   Dennard, Robert H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Gated diode; MOS amplifiers; nonlinear capacitor; nonlinear circuits; single ended sense amplifiers

Indexed keywords

AMPLIFICATION; CAPACITANCE; CAPACITORS; DIODES; FIELD EFFECT TRANSISTORS; MOS DEVICES; THRESHOLD VOLTAGE;

GATED DIODE; MOS AMPLIFIERS; NONLINEAR CAPACITOR; NONLINEAR CIRCUITS; SINGLE ENDED SENSE AMPLIFIERS;

AMPLIFIERS (ELECTRONIC);

EID: 18744369786     PISSN: 15497747     EISSN: 15583791     Source Type: Journal    
DOI: 10.1109/TCSII.2005.843494     Document Type: Article

References (2)

1. A. S. Grove, Physics and Technology of Semiconductor Devices. New York: Wiley, 1967.
2. W. K. Luk and R. H. Dennard, “2T1D memory cell with voltage gain,” in Proc. Symp. VLSI Circuits, 2004, pp. 184–187.