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Volumn 92, Issue 7, 2002, Pages 4123-4125

In situ study of the effect of temperature on the electronic structure of Ni xMn 3-xO 4+δ thin films using scanning tunneling spectroscopy

(5) Basu, A a Brinkman, A W a Klusek, Z b Datta, P K b Kowalczyk, P b

a DURHAM UNIVERSITY (United Kingdom)

b NORTHUMBRIA UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECT OF TEMPERATURE; IN-SITU STUDY; LOCAL DENSITY OF STATE; NEGATIVE TEMPERATURE COEFFICIENT OF RESISTANCES; SCANNING TUNNELING SPECTROSCOPY; STRUCTURED MATERIALS; TEMPERATURE RANGE; VARIABLE RANGE HOPPING; VARIABLE RANGE HOPPING MODEL;

ELECTRONIC STRUCTURE; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY;

MANGANESE;

EID: 18644383382 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1505690 Document Type: Article

Times cited : (10)

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