Direct measurement of Urbach tail and gap state absorption in CuGaSe 2 thin films by photothermal deflection spectroscopy and the constant photocurrent method

Journal of Applied Physics

Volumn 92, Issue 6, 2002, Pages 3016-3020

  Meeder, A ^a   Marrón, D Fuertes ^a   Rumberg, A ^a   Lux Steiner, M Ch ^a   Chu, V ^b   Conde, J P ^c  

^a HAHN MEITNER INSTITUT   (Germany)

^b INESC   (Portugal)

^c INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; CHEMICAL VAPOR DEPOSITED; CONSTANT PHOTOCURRENT METHODS; DEVICE-QUALITY; DIRECT MEASUREMENT; GAP STATE; GROWTH PROCESS; NEAR-SURFACE DEFECTS; NEAR-SURFACE LAYERS; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; PHYSICAL VAPOR DEPOSITED; TWO-LAYER SYSTEMS; URBACH TAIL;

PHOTOCURRENTS; SEMICONDUCTING SELENIUM COMPOUNDS; SURFACE DEFECTS; THIN FILMS; VAPORS;

DEFECT DENSITY;

EID: 18644380654     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1501745     Document Type: Article

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