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Volumn 13, Issue 5, 2002, Pages 644-652

Fabrication by means of x-ray lithography of two-dimensional GaAs/AlGaAs photonic crystals with an unconventional unit cell

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIELECTRIC PROPERTIES; OPTICAL RESOLVING POWER; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; X RAY LITHOGRAPHY;

EID: 18644365697     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/13/5/321     Document Type: Article
Times cited : (20)

References (29)
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    • Shoji, S.1    Kawata, S.2
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    • For a review see Krauss T.F. and De La Rue R.M. 1999 Photonic crystals in the optical regime past, present and future Prog. Quantum Electron. 23 51-96.
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    • Krauss, T.F.1    De La Rue, R.M.2
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    • (2001) Microelectron. Eng. , vol.57-58 , pp. 1017-1021
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    • Modeling image formation in layered structures, application to x-ray lithography
    • Tokyo, 1997
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    • at press
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.