LAVA web-based remote simulation: Enhancements for education and technology innovation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 2, 2001, Pages 1500-1506

  Lee, Sang Il ^a   Ng, Ka Chun ^a   Orimoto, Takashi ^a   Pittenger, Jason ^a   Horie, Toshi ^a   Adam, Kostas ^a   Cheng, Mosong ^a   Croffie, Ebo ^a   Deng, Yunfei ^a   Gennari, Frank ^a   Pistor, Tom ^a   Robins, Garth ^a   Williamson, Mike ^a   Wu, Bo ^a   Yuan, Lei ^a   Neureuther, Andrew R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Aberration monitors; Aberrations; Chemically amplified resist; Defect interaction; Defects; Deposition; Education; Electron beam; Etching; Imaging; Lift off; Line end shortening; Metalization; Resist models; Simulation; Web based simulation

Indexed keywords

ABERRATIONS; COMPUTER GRAPHICS; COMPUTER SIMULATION; COMPUTER WORKSTATIONS; PARALLEL PROCESSING SYSTEMS; REMOTE SENSING; WEBSITES;

CHEMICALLY-AMPLIFIED RESISTS;

PHOTORESISTS;

EID: 18544371598     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.435691     Document Type: Conference Paper

References (9)

1. C. Hsu, R. Yang, J. Cheng, P. Chien, V. Wen, A. R. Neureuther, "Lithography analysis using virtual access (LAVA) web resource," SPIE Vol. 3334, pp. 197-201, 1998.
2. K.H. Toh and A.R. Neureuther, "Identifying and Monitoring Effects of Lens Aberrations in Projection Printing," SPIE Proceedings, Vol. 772, pp. 202-209, 1987.
3. W.G. Oldham, S.N. Nandgaonkar, A.R. Neureuther, and M.M. Toole, "A General Simulator for VLSI Lithography and Etching Processes. Part I - Applications to Projection Lithography," IEEE Transactions on Electron Devices, Vol. ED-26, No.4, pp.717-722, April 1979.
4. W.G. Oldham, A.R. Neureuther, C. Sung, J.L. Reynolds, and S.N. Nandgaonkar, "A General Simulator for VLSI Lithography and Etching Processes: Part II-Application to Deposition and Etching", IEEE on Trans. on Electron Devices, Vol.ED-27, No.8, pp. 1455-1459, August, 1980.
5. K.K.H. Toh, A.R. Neureuther and E.W. Scheckler, "Algorithms for Simulation of Three-Dimensional Etching," IEEE Trans. CAD, Vol. CAD-13, No 5, pp. 616-624, May 1994.
6. E.W. Scheckler and A.R. Neureuther "Models and Algorithms for Three-Dimensional Simulation with SAMPLE-3D," IEEE Trans. CAD, Vol. CAD-13, No. 2, pp. 219-230, Feb 1994.
7. A. Wong, R. Guerrieri, and A.R. Neureuther, "Massively Parallel Electromagnetic Simulation for Photolithographic applications," IEEE Transactions on CAD, Vol. 14, No. 10, pp. 1231-1240, Oct 1995.
8. E. Croffie, M.Cheng and A. Neureuther, "Overview of the STORM program: application to 193nm single layer resists", Microelectronic Engineering, vol. 53, June 2000, p437-442.
9. D.T. Blackston, J. Demmel, A.R. Neureuther and Bo Wu, "On the Integration of an Adaptive parallel N-Body Solver into a Particle by Particle Electron Beam Interaction Simulator," SPIE Proc. 3777, pp. 228-241.