Epitaxial CuInS2 on Si(111) using di-tert-butyl disulfide as sulphur precursor

Thin Solid Films

Volumn 480-481, Issue , 2005, Pages 347-351

  Calvet, Wolfram ^a   Lehmann, Carsten ^a   Plake, Tilo ^a   Pettenkofer, C ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Hydrogen terminated Si(111); Low energy electron diffraction; Molecular beam epitaxy

Indexed keywords

COPPER COMPOUNDS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FERMI LEVEL; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PARTIAL PRESSURE; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; THIN FILMS; ULTRAHIGH VACUUM; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

HYDROGEN-TERMINATED SI(111); RAPID THERMAL PROCESSING (RTP); SULFUR PRECURSOR; TEMPERATURE GROWTH;

SILICON;

EID: 18444418295     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.090     Document Type: Conference Paper

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