Summary of ISO/TC 201 Standard: XIX ISO 17331:2004 - Surface chemical analysis - Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection x-ray fluorescence (TXRF) spectroscopy

Surface and Interface Analysis

Volumn 37, Issue 5, 2005, Pages 522-523

  Mori, Yoshihiro ^a  

^a Siltronic Japan Corporation   (Japan)

Author keywords

AAS; Atomic absorption spectroscopy; Chemical preconcentration; ICPMS; Inductively coupled plasma mass spectroscopy; International standard; Reference material; Total reflection x ray fluorescence spectroscopy; TXRF; Vapour phase decomposition; VPD

Indexed keywords

ACIDS; DECOMPOSITION; FLUORESCENCE; INDUCTIVELY COUPLED PLASMA; IRON; MASS SPECTROMETRY; NICKEL; STANDARDIZATION; SURFACE TREATMENT; VAPORS; X RAY SPECTROSCOPY;

ATOMIC ABSORPTION SPECTROSCOPY (AAS); CHEMICAL PRECONCENTRATIONS; INDUCTIVELY COUPLED PLASMA MASS SPECTROSCOPY (ICPMS); INTERNATIONAL STANDARDS; REFERENCE MATERIALS; SURFACE CONTAMINATION ANALYSIS; TOTAL-REFLECTION X-RAY FLUORESCENCE (TXRF) SPECTROSCOPY; VAPOR-PHASE (VPD) DECOMPOSITION;

SILICON WAFERS;

EID: 18444396254     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.2043     Document Type: Article

References (5)

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3. Huber A, Rath HJ, Eichinger P, Bauer T, Kotz L, Staudigl R. In ECS Proceedings, PV88-20. The Electrochemical Society: Pennington: NJ, 1988; 109.
4. Gohshi Y. Surf. Interface Anal. 2002; 33: 369.
5. Saito K, Tokuyama F. In Extended Abstracts of the 50th Discussion Meeting of the Japan Society for Analytical Chemistry, Matsue, Japan, 1989; 219.