Crosshatch observation in MBE-grown Be-doped InGaAs epilayer on InP

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 610-613

  Bando, H ^a   Kosuge, M ^a   Ban, K ^a   Yoshino, H ^a   Takahashi, R ^a   Okamoto, H ^a   Okuno, T ^b   Masumoto, Y ^c  

^a CHIBA UNIVERSITY   (Japan)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Crystal morphology; A1. Doping; A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting III V materials

Indexed keywords

BERYLLIUM; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL MORPHOLOGY; DONOR ATOMS; LATTICE MISMATCH; SEMICONDUCTING III-V MATERIALS;

INDIUM COMPOUNDS;

EID: 18444392446     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.079     Document Type: Conference Paper

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