Electrical and optical characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperature

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 1150-1153

  Le Donne, A ^a   Binetti, S ^a   Pizzini, S ^a  

^a Materials Science Department   (Italy)

Author keywords

4H SiC; Minority carriers diffusion length; Photoluminescence; Radiation induced defects

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HEAT TREATMENT; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; RADIATION EFFECTS; X RAY ANALYSIS;

4H-SIC; MINORITY CARRIERS DIFFUSION LENGTH; RADIATION-INDUCED DEFECTS; X-RAY DETECTORS;

SILICON CARBIDE;

EID: 18444385932     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.10.020     Document Type: Conference Paper

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