Photoluminescence of Er-doped SiO2 layers containing Si nanoclusters using dual ion implantation and annealing

Vacuum

Volumn 78, Issue 2-4, 2005, Pages 667-671

  Cheng, X Q ^a   Sun, J M ^a   Kogler R ^a   Skorupa, W ^a   Moller W ^a   Prucnal, S ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b MARIA CURIE SK ODOWSKA UNIVERSITY   (Poland)

Author keywords

Dual ion implantation; Erbium; Photoluminescence; Si nanoclusters

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); ENERGY TRANSFER; ION IMPLANTATION; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL FIBERS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS;

ANNEALING TEMPERATURE; DUAL ION IMPLANTATION; ION EXCITATION; SILICON NANOCLUSTERS;

ERBIUM COMPOUNDS;

EID: 18444385890     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.01.104     Document Type: Conference Paper

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