The influence of thermal annealing in presence of CdCl2 on the electrophysical properties of the CdS/CdTe solar cells

Thin Solid Films

Volumn 480-481, Issue , 2005, Pages 254-258

  Caraman, M ^a   Gasin, P ^a   Vatavu, S ^a  

^a MOLDOVA STATE UNIVERSITY   (Moldova)

Author keywords

CdCl2; CdS CdTe solar cells; Thermal annealing

Indexed keywords

ABSORPTION SPECTROSCOPY; CHARGE CARRIERS; DEFECTS; IMPURITIES; PHOTOVOLTAIC CELLS; QUANTUM THEORY; RAPID THERMAL ANNEALING; RECRYSTALLIZATION (METALLURGY); SOLAR CELLS;

ELECTROPHYSICAL PROPERTIES; IMPURITY LEVEL; PHOTOVOLTAIC PROPERTIES; SEMICONDUCTOR LAYERS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 18444371763     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.025     Document Type: Conference Paper

References (5)

1. X. Wu, et al. High-efficiency CTO/ZTO/CdS/CdTe Polycrystalline Thin-Film Solar Cells, preprint proceedings of the NCPV Program Review Meeting 14-17 October 2001, Lakewood, Colorado.
2. K.L. Chopra, and S.R. Das Thin Film Solar Cells 1983 Plenum Press New York
3. T. Toyama, T. Suzuki, M. Gotoh, K. Nakamura, and H. Okamoto Solar Energy Materials and Solar Cells 67 2001 41
4. P. Gasin, M. Caraman, G. Cerbanic, A. Focsa, C. Radu, and C. Rotaru Romanian Journal of Optoelectronics 5 3 1997 (July-September) 27
5. Yu. I. Ravich, The photomagnetic effect in semiconductors and its applications, Moscow, Sov. Radio, 1967).